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PROFET(R) BTS 308
Smart Highside Power Switch
* Overload protection * Current limitation * Short circuit protection * Thermal shutdown * Overvoltage protection (including load dump) * Fast demagnetization of inductive loads * Reverse battery protection1) * Undervoltage and overvoltage shutdown with auto-restart and hysteresis * Open drain diagnostic output * Open load detection in OFF-state * CMOS compatible input * Loss of ground and loss of Vbb protection * Electrostatic discharge (ESD) protection
Features
Product Summary Overvoltage protection Operating voltage On-state resistance Load current (ISO)
Vbb(AZ) Vbb(on) RON IL(ISO)
60 V 4.7 ... 34 V 300 m 1.3 A
TO-220AB/5
5
5 1 Straight leads
1 5
Standard
SMD
* C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads * Most suitable for inductive loads * Replaces electromechanical relays, fuses and discrete circuits * Fast switching * Not suitable for lamp loads
Application
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
+ V bb
Voltage source V Logic Voltage sensor
3
Overvoltage protection
Current limit
Gate protection
Charge pump Level shifter Rectifier
Limit for unclamped ind. loads Open load
OUT
2
IN
Temperature sensor
5
ESD
Logic
Load
detection Short circuit detection
GND
4
ST
PROFET
Load GND
1
Signal GND
1
)
With external current limit (e.g. resistor RGND=150 ) in GND connection, resistor in series with ST connection, reverse load current limited by connected load.
Semiconductor Group
Page 1 of 14
2003-Oct-01
BTS 308
Pin 1 2 3 4 5 Symbol GND IN Vbb ST OUT (Load, L) I + S O Function Logic ground Input, activates the power switch in case of logical high signal Positive power supply voltage, the tab is shorted to this pin Diagnostic feedback, low on failure Output to the load
Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 3) Load current (Short circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC), TC 25 C Electrostatic discharge capability (ESD) IN, ST: (Human Body Model) all other pins: Input voltage (DC) Current through input pin (DC) Current through status pin (DC)
see internal circuit diagrams page 6
Symbol Vbb IL Tj Tstg Ptot VESD VIN IIN IST
Values 60 self-limited -40 ...+150 -55 ...+150 50 1 tbd (>1) -10 ... +16 5.0 5.0 2.5 75
Unit V A C W kV V mA
Thermal resistance
chip - case: junction - ambient (free air):
RthJC RthJA
K/W
Semiconductor Group
Page 2
2003-Oct-01
BTS 308 Electrical Characteristics
Parameter and Conditions
at Tj = 25 C, Vbb = 24 V unless otherwise specified
Symbol
Values min typ max
Unit
Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 0.8 A, Vbb = 12V Tj=25 C: RON Tj=150 C: Nominal load current, ISO Norm (pin 3 to 5) VON = 0.5 V, TC = 85 C Output current (pin 5) while GND disconnected or GND pulled up, Vbb=30 V, VIN= 0, see diagram page 7 Turn-on time to 90% VOUT: Turn-off time to 10% VOUT: RL = 47 , Vbb = 12V, Tj =-40...+150C Slew rate on, 10 to 30% VOUT, RL = 47 , Vbb = 12V, Tj =-40...+150C Slew rate off, 10 to 30% VOUT, RL = 47 , Vbb = 12V, Tj =-40...+150C Operating Parameters Operating voltage2) Operating voltage slew rate Undervoltage shutdown IL(ISO) IL(GNDhigh)
-1.18 --
270 540 1.3 --
300 600 -1
m
A mA s
ton toff dV /dton -dV/dtoff
--1 2
-----
50 55 10 15
V/s V/s
Tj =-40...+150C: Vbb(on) dVbb/dt Tj =25C: Vbb(under) Tj =-40...+150C: Undervoltage restart Tj =-40...+150C: Vbb(u rst) Undervoltage restart of charge pump Vbb(ucp) see diagram page 11 Tj =-40...+150C: Undervoltage hysteresis Vbb(under) Vbb(under) = Vbb(u rst) - Vbb(under) Overvoltage shutdown Tj =-40...+150C: Vbb(over) Overvoltage restart Tj =-40...+150C: Vbb(o rst) Overvoltage hysteresis Tj =-40...+150C: Vbb(over) 3) Overvoltage protection Tj =-40...+150C: Vbb(AZ) Ibb=10 mA Standby current (pin 3), Ibb(off) VIN=0 Tj=-40...+150C: 4) Operating current (Pin 1) , VIN=5 V IGND
4.7 -1 2.9 2.7 ---34 34 -59
----4.9 0.2 --0.5 70
34 +1 4.5 4.7 4.9 7.5 -46 ----
V V/s V V V V V V V V A
---
40 2
50 4
mA
2) 3) 4
)
At supply voltage increase up to Vbb= 4.9 V typ without charge pump, VOUT Vbb - 2 V Meassured without load. See also VON(CL) in table of protection functions and circuit diagram page 7. Add IST, if IST > 0, add IIN, if VIN>5.5 V
Semiconductor Group
Page 3
2003-Oct-01
BTS 308
Parameter and Conditions
at Tj = 25 C, Vbb = 24 V unless otherwise specified
Symbol
Values min typ max
Unit
Protection Functions5) Initial peak short circuit current limit (pin 3 to 5)6), IL(SCp) ( max 100 s if VON > VON(SC) ) Vbb = 12V Tj =-40C: Tj =25C: =+150C: Tj Short circuit shutdown delay after input pos. slope VON > VON(SC), Tj =-40..+150C: td(SC)
min value valid only, if input "low" time exceeds 60 s
--2.5 15
-5 ---
10 --100
A
s V V C K V
Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) IL= 1 A, Tj =-40..+150C: Short circuit shutdown detection voltage (pin 3 to 5) Thermal overload trip temperature Thermal hysteresis Reverse battery (pin 3 to 1) 7) Diagnostic Characteristics Open load detection current
(included in standby current Ibb(off))
VON(CL) VON(SC) Tjt
59 -150 ---
67 3.5 -10 --
75 ---32
Tjt
-Vbb
Tj=-40...+150C: IL(off) Tj=-40..150C: VOUT(OL)
0 2
-3
30 4
A V
Open load detection voltage
5
)
6 7
) )
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. Short circuit current limit for max. duration of td(SC) max=100 s, prior to shutdown Requires 150 resistor in GND connection. Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7).
Semiconductor Group
Page 4
2003-Oct-01
BTS 308
Parameter and Conditions
at Tj = 25 C, Vbb = 24 V unless otherwise specified
Symbol
Values min typ max
Unit
Input and Status Feedback8) Input resistance RI see circuit page 6 Input turn-on threshold voltage Tj =-40..+150 VIN(T+) Input turn-off threshold voltage Tj =-40..+150 VIN(T-) Input threshold hysteresis, Tj =-40..+150C VIN(T) Off state input current (pin 2), VIN = 0.4 V, IIN(off) Tj =-40..+150C On state input current (pin 2), VIN = 3.5 V, Tj =-40..+150C Delay time for status with open load
after Input neg. slope (see diagram page 11)
-1.5 0.8 0.2 8 10 50 15
4 ----22 -50
-2.4 --30 50 400 100
k V V V A A s s
IIN(on) td(ST OL3)
Status invalid after positive input slope td(ST SC) (short circuit) Tj=-40 ... +150C: Status output (open drain) Zener limit voltage Tj =-40...+150C, IST = +50 uA: VST(high) ST low voltage Tj =-40...+150C, IST = +1.6 mA: VST(low)
5.4 --
6 --
-0.4
V
8)
If a ground resistor RGND is used, add the voltage drop across this resistor.
Semiconductor Group
Page 5
2003-Oct-01
BTS 308 Truth Table
Inputlevel Normal operation Open load Short circuit to GND Short circuit to Vbb Overtemperature Undervoltage Overvoltage L = "Low" Level H = "High" Level L H L H L H L H L H L H L H Output level L H
9
Status BTS 308 H H L H H L L H L L H H H H
)
H L L H H L L L L L L
X = don't care Z = high impedance, potential depends on external circuit Status signal after the time delay shown in the diagrams (see fig 5. page 11)
Terms
Ibb I IN 2 I ST V V bb IN V ST 4 ST GND 1 R GND IGND V OUT IN 3 Vbb IL PROFET OUT 5 VON
Status output
+5V
R ST(ON)
ST
GND
ESDZD
Input circuit (ESD protection)
R IN I
ESD-Zener diode: 6 V typ., max 5 mA; RST(ON) < 250 at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V).
Short circuit detection
Fault Condition: VON > 3.5 V typ.; IN high
ESD-ZD I GND
I
I
+ V bb
ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V).
V ON
OUT
Logic unit
Short circuit detection
9
)
Power Transistor off, high impedance, internal pull up current source for open load detection.
Semiconductor Group
Page 6
2003-Oct-01
BTS 308
GND disconnect Inductive and overvoltage output clamp
+ V bb V Z
3 IN Vbb PROFET 4 V bb V IN V ST ST GND 1 V GND OUT
2
VON
5
OUT GND
PROFET
VON clamped to 67 V typ.
Any kind of load. In case of Input=high is VOUT VIN - VIN(T+) . Due to VGND >0, no VST = low signal available.
Overvolt. and reverse batt. protection
+ V bb V Z2
GND disconnect with GND pull up
3
R IN
IN
RI Logic
2
IN
Vbb PROFET OUT
5
R ST
ST
4
V Z1
ST GND 1
PROFET
GND
R GND
Signal GND
V
V bb
V IN ST
V
GND
VZ1 = 6.2 V typ., VZ2 = 70 V typ., RGND = 150 , RST= 15 k, RI= 4 k typ.
Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available.
Open-load detection
OFF-state diagnostic condition: VOUT > 3 V typ.; IN low
Vbb disconnect with charged inductive load
3 high 2 IN Vbb PROFET 4 ST GND 1
I L(OL)
OUT
5
OFF
V
bb
Logic unit
Open load detection
V
OUT
Normal load current can be handled by the PROFET itself.
Signal GND
Semiconductor Group
Page 7
2003-Oct-01
BTS 308
Vbb disconnect with charged external inductive load
S high 2 IN 3 Vbb
Inductive Load switch-off energy dissipation
E bb E AS Vbb PROFET OUT EL ELoad
IN
PROFET OUT 5 D
4
ST GND 1
=
ST GND ZL
V
{
L RL
bb
ER
If other external inductive loads L are connected to the PROFET, additional elements like D are necessary.
Energy stored in load inductance: EL = 1/2*L*I L While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= VON(CL)*iL(t) dt, with an approximate solution for RL > 0 : EAS= IL* L IL*RL *(V + |VOUT(CL)|)* ln (1+ ) |VOUT(CL)| 2*RL bb
2
Semiconductor Group
Page 8
2003-Oct-01
BTS 308 Options Overview
all versions: High-side switch, Input protection, ESD protection, load dump and reverse battery protection with 150 in GND connection, protection against loss of ground
Type Logic version
BTS 410D2 410E2 410G2 410H2 D X X X X E G H X
307
308
Overtemperature protection with hysteresis Tj >150 C, latch function10)11) Tj >150 C, with auto-restart on cooling Short circuit to GND protection
switches off when VON>3.5 V typ. and Vbb> 8 V typ10) switches off when VON>3.5 V typ. switches off when VON>8.5 V (when first turned on after approx. 0 s) Achieved through overtemperature protection typ.10)
X
X
X X X X
X
X
Open load detection
in OFF-state with sensing current -- A typ. in ON-state with sensing voltage drop across power transistor
X
X
X X X X X -13) X X X X
X X X X X 13)
X X X X -13) X X X X X X X X X X X X X X X X X X X -
Undervoltage shutdown with auto restart Overvoltage shutdown with auto restart )
12
Status feedback for
overtemperature short circuit to GND short to Vbb open load undervoltage overvoltage
X -
Status output type
CMOS Open drain X X X
X
X
Output negative voltage transient limit
(fast inductive load switch off) to Vbb - VON(CL) X X X X X X X X X X X X X
Load current limit
high level (can handle loads with high inrush currents) low level (better protection of application)
X
X
X X
Protection against loss of GND
) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (V OUT 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch between turn on and td(SC). 11) With latch function. Reseted by a) Input low, b) Undervoltage 12) No auto restart after overvoltage in case of short circuit 13) Low resistance short Vbb to output may be detected in ON-state by the no-load-detection
10
Semiconductor Group
Page 9
2003-Oct-01
BTS 308
Timing diagrams
Figure 1a: Vbb turn on:
IN
Figure 3a: Turn on into short circuit,
IN
t V bb
ST
d(bb IN)
VOUT
V
OUT
td(SC)
A ST open drain
I
L
t
t A
in case of too early VIN=high the device may not turn on (curve A) td(bb IN) approx. 150 s td(SC) approx. 200s if Vbb - VOUT > 3.5 V typ.
Figure 3b: Turn on into overload,
Figure 2a: Switching an inductive load
IN
IN
IL I L(SCp)
ST
I L(SCr)
V
OUT
ST t
I
L
t
Heating up may require several seconds, Vbb - VOUT < 3.5 V typ.
Semiconductor Group
Page 10
2003-Oct-01
BTS 308
Figure 3c: Short circuit while on: Figure 5a: Open load: detection in OFF-state, turn on/off to open load
IN
IN
t
ST
ST
d(ST OL3)
V OUT
V OUT
I
IL
L
**) t
open
normal *) t
**) current peak approx. 20 s
in case of external capacity td(ST,OL3) may be higher due to high impedance *) IL = -- A typ
Figure 4a: Overtemperature, Reset if (IN=low) and (TjFigure 6a: Undervoltage:
IN
IN
V bb
ST
V
bb(under)
Vbb(u cp) V
bb(u rst)
V
OUT
V OUT
T
J
ST open drain
t
t
*) ST goes high , when VIN=low and TjSemiconductor Group
Page 11
2003-Oct-01
BTS 308
Figure 6b: Undervoltage restart of charge pump
V on VON(CL)
Figure 8a: Overvoltage at short circuit shutdown:
IN
Vbb
V bb(o rst)
off-state
on-state
off-state
V
Output short to GND VOUT short circuit shutdown
bb(over)
V
bb(u rst)
V
bb(o rst)
IL
V V bb(under)
bb(u cp)
ST V bb t
charge pump starts at Vbb(ucp) =4.9 V typ.
Overvoltage due to power line inductance. No overvoltage autorestart of PROFET after short circuit shutdown.
Figure 7a: Overvoltage:
IN
Vbb
V ON(CL)
Vbb(over)
V bb(o rst)
V
OUT
ST
t
Semiconductor Group
Page 12
2003-Oct-01
BTS 308
Package and Ordering Code
All dimensions in mm
Standard TO-220AB/5
BTS 308
Ordering code tbd
SMD TO-220AB/5, Opt. E3062 Ordering code
BTS 308 E3062A T&R: tbd
TO-220AB/5, Option E3043 Ordering code
BTS 308 E3043 tbd
Semiconductor Group
Page 13
2003-Oct-01
BTS 308
Changed since 08.96 Date Change Dec "suitable for PWM" deleted at Application List (Page 1) due to the fact, that where 96
may occure problems with current limit. Initial short circuit current limit IL(SCp) "VON=3V" deleted Option overview, Short circuit to GND protection, "Vbb> 8 V typ" deletet for BTS308, only valid for BTS410H2
Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 Munchen (c) Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Semiconductor Group
Page 14
2003-Oct-01

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